低エネルギーCN分子負イオンビーム蒸着膜における窒素含有率のエネルギー依存性 Ion Eergy Dependence of N/C Ratio in Low Energy CN Molecular Negative-ion Beam Deposited Films

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著者

    • 辻 博司 TSUJI Hiroshi
    • 京都大学大学院工学研究科電子物性工学教室 Department of Electronic Science and Engineering, Kyoto University
    • 石川 順三 ISHIKAWA Junzo
    • 京都大学大学院工学研究科電子物性工学教室 Department of Electronic Science and Engineering, Kyoto University

抄録

CN negative-ion beam deposited films have been investigated with respect to dependencies of a nitrogen atom content and interatomic bonding state upon the incident ion energy. The CN negative ions extracted from a sputter-type negative ion source were deposited on a silicon substrate n-Si (100) at various ion energies in a range of 25-500 eV. From Rutherford backscattering spectroscopy (RBS) measurement, the maximum of N/C ratio and atomic density in films were obtained N/C = 0.60, 1.56 × 10<SUP>23</SUP> atoms · cm<SUP>-3</SUP> at an ion energy of 75 eV, respectively. From X-ray photoelectron spectroscopy (XPS) analysis, nitrogen atoms in the film were found to be mostly combined with carbon atoms in bonding states of C = N and C ≡ N. The maximum fraction of C-N bond reached 11% of nitrogen content at an ion energy of 500 eV. In Raman spectroscopy, CN<SUB>x</SUB>films showed similar Raman bands to those of the diamond like carbon (DLC) film.

収録刊行物

  • 真空

    真空 42(3), 229-232, 1999-03

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476327
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4714619
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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