反応性スパッタ法による酸素添加a-GeC : H薄膜 Oxygen Doped Amorphous GeC : H Films Prepared by Reactive Sputtering

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Oxygen doped amorphous GeC : H films have been deposited by a reactive rf magnetron sputtering of Ge target in neon-methane and oxygen gas mixtures. The effect of oxygen partial pressure ratio <I>R</I> on the structural, optical and electrical properties of the films was investigated. With increasing <I>R</I>, the bonding configuration concerning oxygen-bonds appears and the optical bandgap increases. Both the dark conductivity and photoconductivity show maxima at <I>R</I>= 10%. They decrease above <I>R</I>=30%, which is ascribed to the increase in the Ge-C and Ge-O bonds.

収録刊行物

  • 真空  

    真空 42(3), 233-236, 1999-03 

    The Vacuum Society of Japan

参考文献:  10件

各種コード

  • NII論文ID(NAID)
    10002476336
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4714634
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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