反応性スパッタ法による酸素添加a-GeC : H薄膜 Oxygen Doped Amorphous GeC : H Films Prepared by Reactive Sputtering
Oxygen doped amorphous GeC : H films have been deposited by a reactive rf magnetron sputtering of Ge target in neon-methane and oxygen gas mixtures. The effect of oxygen partial pressure ratio <I>R</I> on the structural, optical and electrical properties of the films was investigated. With increasing <I>R</I>, the bonding configuration concerning oxygen-bonds appears and the optical bandgap increases. Both the dark conductivity and photoconductivity show maxima at <I>R</I>= 10%. They decrease above <I>R</I>=30%, which is ascribed to the increase in the Ge-C and Ge-O bonds.
真空 42(3), 233-236, 1999-03
The Vacuum Society of Japan