Oxygen Doped Amorphous GeC:H Films Prepared by Reactive Sputtering.

• SAITO Nobuo

  Takamatsu National college of Technology

• NAKAAKI Isamu

  Fuji Industrial Research Institute of Shizuoka Prefecture

• IWATA Hiromu

  Kagawa Prefectural Industrial Research Institute

• YAMAGUCHI Tomuo

  Shizuoka University

• NAKAMURA Sigeaki

  Takamatsu National college of Technology

• YOSHIOKA Shoji

  Kagawa University

Bibliographic Information

Other Title

• 反応性スパッタ法による酸素添加ａ‐ＧｅＣ：Ｈ薄膜
• ハンノウセイ スパッタホウ ニ ヨル サンソ テンカ a-GcC H ハクマク

Abstract

Oxygen doped amorphous GeC : H films have been deposited by a reactive rf magnetron sputtering of Ge target in neon-methane and oxygen gas mixtures. The effect of oxygen partial pressure ratio R on the structural, optical and electrical properties of the films was investigated. With increasing R, the bonding configuration concerning oxygen-bonds appears and the optical bandgap increases. Both the dark conductivity and photoconductivity show maxima at R= 10%. They decrease above R=30%, which is ascribed to the increase in the Ge-C and Ge-O bonds.

Journal

• Shinku

  Shinku 42 (3), 233-236, 1999

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390001204063741184
• NII Article ID: 10002476336
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.42.233
• ISSN: 18809413
• ISSN: 05598516
• ISSN: http://id.crossref.org/issn/05598516
• NDL BIB ID: 4714634
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4714634
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed