ZnOスパッタ膜の諸特性に及ぼすIIIa元素添加の効果 [in Japanese] Effects of IIIa Elements on Properties of Sputterd ZnO Films [in Japanese]
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The effects of doped IIIa elements on the electrical, optical and structural properties of ZnO films prepared by rf magnetron sputtering using sintered ZnO targets doped with IIIa oxide, have been studied.<BR>We found that the carrier concentration increased as dopant concentration in the target increased regardless of kinds of IIIa elements and that Hall mobility of carrier decreased depending on doped elements in the order of Al, Ga and In, when dopant concentration of these elements were approximately equal.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(3), 249-252, 1999-03
The Vacuum Society of Japan