分子線成長GaAs_<0.5>Sb_<0.5>層のドーピング特性 Doping Characteristics of GaAs_<0.5>Sb_<0.5> Grown by MBE

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Impurity doping characteristics of the GaAsSb layers lattice-matched to InP substrates grown by molecular beam epitaxy was studied. It was found that Si is an effective n-type dopant and Be is an effective p-type dopant for GaAsSb layer lattice-matched to InP. The carrier concentration is comparable to that of the InGaAs layer lattice-matched to InP. Optical properties were also studied for doped GaAsSb layers. It was found that the photoluminescence (PL) intensity for the doped GaAsSb layers is much larger than that of the undoped GaAsSb layer.

収録刊行物

  • 真空  

    真空 42(3), 253-256, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476400
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4714870
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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