分子線成長GaAs_<0.5>Sb_<0.5>層のドーピング特性 Doping Characteristics of GaAs_<0.5>Sb_<0.5> Grown by MBE
Impurity doping characteristics of the GaAsSb layers lattice-matched to InP substrates grown by molecular beam epitaxy was studied. It was found that Si is an effective n-type dopant and Be is an effective p-type dopant for GaAsSb layer lattice-matched to InP. The carrier concentration is comparable to that of the InGaAs layer lattice-matched to InP. Optical properties were also studied for doped GaAsSb layers. It was found that the photoluminescence (PL) intensity for the doped GaAsSb layers is much larger than that of the undoped GaAsSb layer.
真空 42(3), 253-256, 1999-03
The Vacuum Society of Japan