Doping Characteristics of GaAs0.5Sb0.5 Grown by MBE.

DOI Web Site 4 References
  • KATAYAMA Takahiro
    Research Institute for Advanced Science and Technology, Osaka Prefecture University
  • KAWAMURA Yuichi
    Research Institute for Advanced Science and Technology, Osaka Prefecture University
  • YAMAMOTO Akiko
    Research Institute for Advanced Science and Technology, Osaka Prefecture University
  • TAKASAKI Hideki
    School of engneering, Osaka Prefecture University
  • NAITO Hiroyoshi
    School of engneering, Osaka Prefecture University
  • INOUE Naohisa
    Research Institute for Advanced Science and Technology, Osaka Prefecture University

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Other Title
  • 分子線成長ＧａＡｓ０．５Ｓｂ０．５層のドーピング特性
  • ブンシセン セイチョウ GaAs0.5Sb0.5ソウ ノ ドーピング トクセイ

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Abstract

Impurity doping characteristics of the GaAsSb layers lattice-matched to InP substrates grown by molecular beam epitaxy was studied. It was found that Si is an effective n-type dopant and Be is an effective p-type dopant for GaAsSb layer lattice-matched to InP. The carrier concentration is comparable to that of the InGaAs layer lattice-matched to InP. Optical properties were also studied for doped GaAsSb layers. It was found that the photoluminescence (PL) intensity for the doped GaAsSb layers is much larger than that of the undoped GaAsSb layer.

Journal

  • Shinku

    Shinku 42 (3), 253-256, 1999

    The Vacuum Society of Japan

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