Lead Zirconate Titanate (PZT) Thin Film Deposition in Facing Target Sputtering
The deposition rate and crystallograghic structure of PZT thin film deposited by facing target sputtering have been studied experimentally in this paper. The deposition rate increases with increase of sputtering power or with decrease of substrate temperature, and it has a minimum value when the thin film is deposited at the total gas pressure from 0.05 to 1.2 Pa. The perovskite phase and pyrochlore phase exist in all as-deposited samples of PZT thin films, and the relative content of various phases is varied with sputtering conditions.
真空 42(3), 257-260, 1999-03
The Vacuum Society of Japan