高周波-直流結合形マグネトロンスパッタ法によるSnNx薄膜の作製 Preparation of SnNx Thin Films Using RF-DC Coupled Magnetron Sputtering
Tin nitride (SnNx) films were prepared by using an r.f.-d.c. coupled magnetron sputtering system. When an extremely low r.f. power (5 W) and d.c. bias were applied simultaneously to the target, the glow discharge took place at a low d.c. bias of-30 V and the target d.c. current increased smoothly compared with a conventional magnetron sputtering system. It is shown that lowering the target d.c. bias down to-50 V results in an increase of the compositional ratio (N/Sn) up to 0.6 for the SnNx films deposited at the gas flow ratio (N<SUB>2</SUB>/ (Ar+N<SUB>2</SUB>)) of 0.5.
真空 42(3), 269-271, 1999-03
The Vacuum Society of Japan