Preparation of SnNx Thin Films Using RF-DC Coupled Magnetron Sputtering.

• KAMEI Ryuuzou

  Department of Electronics, Hiroshima Institute of Technology

• MIGITA Tatsuo

  Department of Electronics, Hiroshima Institute of Technology

• TANAKA Takeshi

  Department of Electronics, Hiroshima Institute of Technology

• KAWABATA Keishi

  Department of Electronics, Hiroshima Institute of Technology

Bibliographic Information

Other Title

• 高周波‐直流結合形マグネトロンスパッタ法によるＳｎＮｘ薄膜の作製
• コウシュウハ チョクリュウ ケツゴウケイ マグネトロンスパッタホウ ニ ヨル SnNx ハクマク ノ サクセイ

Abstract

Tin nitride (SnNx) films were prepared by using an r.f.-d.c. coupled magnetron sputtering system. When an extremely low r.f. power (5 W) and d.c. bias were applied simultaneously to the target, the glow discharge took place at a low d.c. bias of-30 V and the target d.c. current increased smoothly compared with a conventional magnetron sputtering system. It is shown that lowering the target d.c. bias down to-50 V results in an increase of the compositional ratio (N/Sn) up to 0.6 for the SnNx films deposited at the gas flow ratio (N₂/ (Ar+N₂)) of 0.5.

Journal

• Shinku

  Shinku 42 (3), 269-271, 1999

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390282679040471680
• NII Article ID: 10002476428
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.42.269
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 4715014
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4715014
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed