マグネトロンスパッタ法によるInN薄膜の作成と特性 Properties of InN Films Prepared by Magnetron Sputtering

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抄録

Indium nitride thin films were prepared by the reactive magnetron sputtering method. The indium target was sputtered by pure nitrogen gas. The effects of sputtering pressure <I>P</I> on the structural, optical and electrical properties of the films were investigated. With increasing <I>P</I>, the depo-sion rate of the films decreased, and the film structure changed from crystalline phase with a hexagonal wurtzite structure to amorphous one, together with the increase in the bandgap. It is found that the electrical conductivity, carrier concentration and Hall mobility showed minimum against <I>P</I>.

収録刊行物

  • 真空

    真空 42(3), 272-274, 1999-03

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476436
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4715046
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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