マグネトロンスパッタ法によるInN薄膜の作成と特性 [in Japanese] Properties of InN Films Prepared by Magnetron Sputtering [in Japanese]
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Indium nitride thin films were prepared by the reactive magnetron sputtering method. The indium target was sputtered by pure nitrogen gas. The effects of sputtering pressure <I>P</I> on the structural, optical and electrical properties of the films were investigated. With increasing <I>P</I>, the depo-sion rate of the films decreased, and the film structure changed from crystalline phase with a hexagonal wurtzite structure to amorphous one, together with the increase in the bandgap. It is found that the electrical conductivity, carrier concentration and Hall mobility showed minimum against <I>P</I>.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(3), 272-274, 1999-03
The Vacuum Society of Japan