CrN_<0.9>薄膜を用いたサーミスタボロメータ型赤外線センサの開発 Development of the Thermistor-bolometer Type Infrared (IR) Sensor Using a CrN_<0.9> Thin Film
We developed a new practical thermistor-bolometer type infrared (IR) sensor using a chromium nitride (CrN<SUB>x</SUB>) thin film. CrN<SUB>x</SUB> thin films were prepared by reactive RF magnetron sputtering method. Temperature coefficients of resistance (TCR) of the films were depend on Cr/N composition ratio and the maximum value was-0.8%/°C in CrN<SUB>0.9</SUB> film.<BR>An IR sensor was integrated into a bridge circuit on a glass substrate of 0.15 mm in thickness. When the surface temperature of an objective changed between-1°C and 59°C, the corresponding output voltage between-45 mV and 63 mV was observed. However, the response time was as slow as 2 sec.<BR>To decrease response time by the thermal capacitance of the IR part, we adopted a diaphragm type substrate of 30 μm in thickness. It was made by etching the back surface of the glass substrate. The resultant response time was improved down to 200 ms, which is fast enough for practical application.
真空 42(3), 275-278, 1999-03
The Vacuum Society of Japan