真空マイクロエレクトロニクス素子の陰極材料としての窒化ニオブ薄膜の作製と評価 Properties of Niobium Nitride Thin Films As a Candidate for Cathode Material of Vacuum Microelectronics Devices
We have prepared niobium nitride thin films by ion beam assisted deposition technique, and investigated the film properties from a viewpoint of cathode material for vacuum microelectronics. Substrate temperature and ion-atom arrival rate ratio were selected as deposition parameters. It was shown nitrogen composition was controlled by ion-atom arrival rate ratio and crystalline of mononitride or subnitride were formed in accordance with the nitrogen composition. Work function decreased with an increase in the nitrogen composition and endurance against the low energy argon ion bombardment improved with an increase in the nitrogen composition. The results would be summarized that the mononitride is the preferred composition.
真空 42(3), 305-308, 1999-03
The Vacuum Society of Japan