Electron Emission Characteristics of Niobium Nitride Field Emitters Prepared by Ion Beam Assisted Deposition.
-
- GOTOH Yasuhito
- Department of Electronic Science and Engineering, Kyoto University
-
- NAGAO Masayoshi
- Department of Electronic Science and Engineering, Kyoto University
-
- URA Toshiyuki
- Department of Electronic Science and Engineering, Kyoto University
-
- TSUJI Hiroshi
- Department of Electronic Science and Engineering, Kyoto University
-
- ISHIKAWA Junzo
- Department of Electronic Science and Engineering, Kyoto University
Bibliographic Information
- Other Title
-
- イオンビームアシスト蒸着法により作製した窒化ニオブフィールドエミッタの電子放出特性
- イオンビームアシスト ジョウチャクホウ ニ ヨリ サクセイ シタ チッカ ニオブフィールドエミッタ ノ デンシ ホウシュツ トクセイ
Search this article
Abstract
Electron emission characteristics of niobium nitride field emitter arrays were investigated as a function of nitrogen composition of niobium nitride. Field emitter arrays with 1024 tips were fabricated by depositing niobium nitride onto the silicon field emitter array, which was fabricated by photolithography and wet etching technique. The electron emission characteristics such as current-voltage characteristics and current fluctuation were measured in ultra high vacuum. The results showed that the field emitter array with mononitride showed lower effective work function and lower current fluctuation. The present results indicated that stoichiometric niobium nitride is preferred composition for field emission cathodes of vacuum microelectronics.
Journal
-
- Shinku
-
Shinku 42 (3), 309-312, 1999
The Vacuum Society of Japan
- Tweet
Keywords
Details
-
- CRID
- 1390282679042097024
-
- NII Article ID
- 10002476510
-
- NII Book ID
- AN00119871
-
- ISSN
- 18809413
- 05598516
-
- NDL BIB ID
- 4715304
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed