Electron Emission Characteristics of Niobium Nitride Field Emitters Prepared by Ion Beam Assisted Deposition.

  • GOTOH Yasuhito
    Department of Electronic Science and Engineering, Kyoto University
  • NAGAO Masayoshi
    Department of Electronic Science and Engineering, Kyoto University
  • URA Toshiyuki
    Department of Electronic Science and Engineering, Kyoto University
  • TSUJI Hiroshi
    Department of Electronic Science and Engineering, Kyoto University
  • ISHIKAWA Junzo
    Department of Electronic Science and Engineering, Kyoto University

Bibliographic Information

Other Title
  • イオンビームアシスト蒸着法により作製した窒化ニオブフィールドエミッタの電子放出特性
  • イオンビームアシスト ジョウチャクホウ ニ ヨリ サクセイ シタ チッカ ニオブフィールドエミッタ ノ デンシ ホウシュツ トクセイ

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Abstract

Electron emission characteristics of niobium nitride field emitter arrays were investigated as a function of nitrogen composition of niobium nitride. Field emitter arrays with 1024 tips were fabricated by depositing niobium nitride onto the silicon field emitter array, which was fabricated by photolithography and wet etching technique. The electron emission characteristics such as current-voltage characteristics and current fluctuation were measured in ultra high vacuum. The results showed that the field emitter array with mononitride showed lower effective work function and lower current fluctuation. The present results indicated that stoichiometric niobium nitride is preferred composition for field emission cathodes of vacuum microelectronics.

Journal

  • Shinku

    Shinku 42 (3), 309-312, 1999

    The Vacuum Society of Japan

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