パルスレーザー堆積法により作製したGa_2O_3+In_2O_3光記録膜 Ga_2O_3+In_2O_3 Optical Recording Films Prepared by Pulsed Laser Deposition

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著者

    • 青木 孝憲 AOKI Takanori
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 海見 英樹 KAIMI Hideki
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 鈴木 晶雄 [他] SUZUKI Akio
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 松下 辰彦 MATSUSHITA Tatsuhiko
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 奥田 昌宏 OKUDA Masahiro
    • 大阪府立大学工学部電子物理工学科 Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

抄録

The Ga-In oxide films (100150 nm) have been deposited on glass and quartz substrates by irradiating the pulsed laser beam of an ArF laser (λ=193 nm) on the split target composed of Ga<SUB>2</SUB>O<SUB>3</SUB> and In<SUB>2</SUB>O<SUB>3</SUB> (99.999% purity). In all experiments, a repetition rate of 10 Hz, an energy density of 0.4 J/cm<SUB>2</SUB>, an irradiation time of 12-15 min (7200-9000 shots) and a target-to-substrate distance of 4 cm were used. It was found from optical spectra that for the Ga-In oxide films prepared with a moved distance of Ga<SUB>2</SUB>O<SUB>3</SUB> : In<SUB>2</SUB>O<SUB>3</SUB>=3 : 1 on the split target, there was a difference in the transmittance of greater than 66% near 350 nm wavelength, between the annealed (transparent, Eg<SUP>opt</SUP>= 4.2 eV) and the asdeposited state (opaque, Eg<SUP>opt</SUP>= 2.0 eV). The ability to record on the Ga-In oxide films without a protection layer, using THG of Nd : YAG (λ= 355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelength region.

収録刊行物

  • 真空  

    真空 42(3), 313-316, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476518
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4715330
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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