パルスレーザー堆積法により作製したGa_2O_3+In_2O_3光記録膜 Ga_2O_3+In_2O_3 Optical Recording Films Prepared by Pulsed Laser Deposition
The Ga-In oxide films (100150 nm) have been deposited on glass and quartz substrates by irradiating the pulsed laser beam of an ArF laser (λ=193 nm) on the split target composed of Ga<SUB>2</SUB>O<SUB>3</SUB> and In<SUB>2</SUB>O<SUB>3</SUB> (99.999% purity). In all experiments, a repetition rate of 10 Hz, an energy density of 0.4 J/cm<SUB>2</SUB>, an irradiation time of 12-15 min (7200-9000 shots) and a target-to-substrate distance of 4 cm were used. It was found from optical spectra that for the Ga-In oxide films prepared with a moved distance of Ga<SUB>2</SUB>O<SUB>3</SUB> : In<SUB>2</SUB>O<SUB>3</SUB>=3 : 1 on the split target, there was a difference in the transmittance of greater than 66% near 350 nm wavelength, between the annealed (transparent, Eg<SUP>opt</SUP>= 4.2 eV) and the asdeposited state (opaque, Eg<SUP>opt</SUP>= 2.0 eV). The ability to record on the Ga-In oxide films without a protection layer, using THG of Nd : YAG (λ= 355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelength region.
真空 42(3), 313-316, 1999-03
The Vacuum Society of Japan