高周波スパッタ法により作製したGaIn系酸化物光記録膜 Optical Recording Ga-In-oxide Films Prepared by Radio-Frequency Sputtering
Thin films of Ga-In oxide (100 nm) have been deposited, at an Ar pressure of 4 Pa, on glass substrate at room temperature by radio-frequency (rf) magnetron sputtering with two targets of Ga<SUB>2</SUB>O<SUB>3</SUB> and metallic In, on which rf-power of 150 W and 60 W were added respectively. In the oxide films prepared by this method, the difference in the transmittance, ΔT, between the annealed (300°C × 10 min) and the as-deposited state was more than 60% in the wavelength region of 350600 nm. It was found from XRD spectra that (1) the In (101) peak was formed in the as-deposited state (colored state) and (2) the In<SUB>2</SUB>O<SUB>3</SUB> (222) peak was formed in the annealed state (transparent state). The ability to record on these oxide films without protection layer, using THG of Nd : YAG laser (λ=355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelenght region.
真空 42(3), 317-320, 1999-03
The Vacuum Society of Japan