Optical Recording Ga-In-oxide Films Prepared by Radio-Frequency Sputtering.

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  • AOKI Takanori
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • KAIMI Hideki
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • SUZUKI Akio
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • MATSUSHITA Tatsuhiko
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • OKUDA Masahiro
    Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

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Other Title
  • 高周波スパッタ法により作製したＧａＩｎ系酸化物光記録膜
  • コウシュウハ スパッタホウ ニ ヨリ サクセイ シタ GaInケイ サンカブツ ヒカリ キロク マク

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Abstract

Thin films of Ga-In oxide (100 nm) have been deposited, at an Ar pressure of 4 Pa, on glass substrate at room temperature by radio-frequency (rf) magnetron sputtering with two targets of Ga2O3 and metallic In, on which rf-power of 150 W and 60 W were added respectively. In the oxide films prepared by this method, the difference in the transmittance, ΔT, between the annealed (300°C × 10 min) and the as-deposited state was more than 60% in the wavelength region of 350600 nm. It was found from XRD spectra that (1) the In (101) peak was formed in the as-deposited state (colored state) and (2) the In2O3 (222) peak was formed in the annealed state (transparent state). The ability to record on these oxide films without protection layer, using THG of Nd : YAG laser (λ=355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelenght region.

Journal

  • Shinku

    Shinku 42 (3), 317-320, 1999

    The Vacuum Society of Japan

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