スプリットターゲットを用いるパルスレーザー堆積法により作製したZnO系透明導電膜 Transparent Conducting ZnO-Based Thin Films Prepared by Pulsed Laser Deposition Using Split Targets

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著者

    • 鈴木 晶雄 SUZUKI Akio
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 石田 大顕 ISHIDA Hiroaki
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 振木 昌成 [他] FURIKI Masanari
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 青木 孝憲 AOKI Takanori
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 松下 辰彦 MATSUSHITA Tatsuhiko
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 奥田 昌宏 OKUDA Masahiro
    • 大阪府立大学工学部電子物理工学科 Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

抄録

This paper describes transparent conducting ZnO-based thin films prepared using split targets by a pulsed laser deposition technique with an ArF excimer laser (λ=193 nm). The split targets were prepared by combining ZnO with In<SUB>2</SUB> O<SUB>3</SUB> or Ga<SUB>2</SUB>O<SUB>3</SUB>. The film with a thickness of 167 nm grown at oxygen flow rate of 3 sccm at a substrate temperature of 350°C, with a tracing ratio of ZnO : In<SUB>2</SUB>O<SUB>3</SUB> = 1 : 4, showed the lowest resistivity of 4.55 × 10<SUP>-4</SUP> Ω · cm and an averaged transmittance of 87% in the visible wavelength region. The film (150 nm) grown under the same preparation conditions using the target combined ZnO with Ga<SUB>2</SUB>O<SUB>3</SUB>, with a tracing ratio of ZnO : Ga<SUB>2</SUB>O<SUB>3</SUB> = 5.3 : 1, showed the lowest resisitivity of 3.35 × 10<SUP>-4</SUP> Ω · cm and an averaged transmittance of 90% in the visible wavelength region. The optical energy gaps were estimated by plotting the relationship of the direct transition type, (αhν) <SUP>2</SUP> vs hν using the optical transmission spectra. The crystal orientation and compositions of the films were evaluated by XRD and EDX respectively. It was found from these results that the film preparation using split targets is useful to control the compositions of the ZnO : In<SUB>2</SUB>O<SUB>3</SUB>, and ZnO : Ga<SUB>2</SUB>O<SUB>3</SUB> films.

収録刊行物

  • 真空  

    真空 42(3), 321-324, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476529
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4715375
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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