スプリットターゲットを用いるパルスレーザー堆積法により作製したGa_2O_3-In_2O_3系透明導電膜 Transparent Conducting Ga_2O_3-In_2O_3 Thin Films Prepared by Pulsed Laser Deposition Using Split Targets

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著者

    • 鈴木 晶雄 SUZUKI Akio
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 藤田 雅美 FUJITA Masami
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 青木 孝憲 AOKI Takanori
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 松下 辰彦 MATSUSHITA Tatsuhiko
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 奥田 昌宏 OKUDA Masahiro
    • 大阪府立大学工学部電子物理工学科 Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

抄録

The split target composed of Ga<SUB>2</SUB>O<SUB>3</SUB> and In<SUB>2</SUB>O<SUB>3</SUB> was used to deposit transparent conducting Ga-In oxide thin films on glass substrate by a pulsed laser deposition technique using an ArF laser (λ=193 nm). In all experiments, a repetition rate of 1-20 Hz, an energy density of 0.4-2 J/cm<SUP>2</SUP>, and irradiation time of 20-300 min were used. An optical transmittance of more than 80% in the wavelength region of 380-2700 nm and the lowest resisitivity of 6.96 × 10<SUP>-4</SUP> Ω · cm, attributing to a high Hall mobility of 52.4 cm<SUP>2</SUP>/V · s and a low carrier concentration of 1.71 × 10<SUP>20</SUP> cm<SUP>-3</SUP> were obtained for the 100-150 nm thick Ga-In oxide film with 23.3 wt% Ga content grown in oxygen at substrate temperature of 350°C. The optical energy gap was estimated to be 4.0 eV (310 nm) by plotting the relationship of the direct transition type. The surface morphology packed densely with the ellipsoidal crystallites of axis length of 100-150 nm equal to film thickness was observed by high-resolution SEM.

収録刊行物

  • 真空  

    真空 42(3), 325-328, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476536
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4715393
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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