Textured ZnO-Based Transparent Conducting Films Prepared by Pulsed Laser Deposition. (II).
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- SUZUKI Akio
- Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
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- YONEYAMA Yoshitaka
- Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
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- OKANISHI Shinobu
- Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
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- AOKI Takanori
- Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
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- MATSUSHITA Tatsuhiko
- Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
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- OKUDA Masahiro
- Department of Physics and Electronics, College of Engineering, Osaka Prefecture University
Bibliographic Information
- Other Title
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- パルスレーザー堆積法により作製した凹凸構造を有するZnO系透明導電膜 (II)
- パルスレーザー タイセキホウ ニ ヨリ サクセイ シタ オウトツ コウゾウ オ ユウスル ZnOケイ トウメイ ドウデン マク 2
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Abstract
About 800-nm-thick ZnO films doped with 4 wt% Ga2O3 (GZO films) have been deposited on glass and quartz substrates by a pulsed laser deposition method using Second-Harmonic-Generation (SHG) of Nd : YAG laser (λ =532 nm). In all experiments, a repetition rate of 10 Hz, energy densities of 0.12.5 J/cm2, and irradiation times of 23 h were used. Scanning-Electron-Microscope (SEM) observations of the film surface revealed that there were micro-textured structures (0.51 μm in diameter) surrounded by small rugged and irregular structures (250400 nm in size). It was recognized from XRD spectra that a strong peak of (103) planes reflected from the micro-textured milky surfaces is dominant. A haze ratio of 46.6% was obtained at a wavelength of 550 nm for about 800-nm-thick GZO (4 wt%) films grown at substrate temperature of 300°C in oxygen with a flow rate of 3 sccm. The lowest resisitivity of 2.33 × 10-4 Ω· cm and the lowest sheet resistance of 2.72 Ω/sq were obtained for these GZO (4 wt%) films.
Journal
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- Shinku
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Shinku 42 (3), 329-332, 1999
The Vacuum Society of Japan
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Details 詳細情報について
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- CRID
- 1390282679042088704
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- NII Article ID
- 10002476542
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 4715429
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed