パルスレーザー堆積法により作製した凹凸構造を有するZnO系透明導電膜(II) Textured ZnO-Based Transparent Conducting Films Prepared by Pulsed Laser Deposition (II)

この論文にアクセスする

この論文をさがす

著者

    • 鈴木 晶雄 SUZUKI Akio
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 米山 佳孝 YONEYAMA Yoshitaka
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 岡西 忍 [他] OKANISHI Shinobu
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 青木 孝憲 AOKI Takanori
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 松下 辰彦 MATSUSHITA Tatsuhiko
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 奥田 昌宏 OKUDA Masahiro
    • 大阪府立大学工学部電子物理工学科 Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

抄録

About 800-nm-thick ZnO films doped with 4 wt% Ga<SUB>2</SUB>O<SUB>3</SUB> (GZO films) have been deposited on glass and quartz substrates by a pulsed laser deposition method using Second-Harmonic-Generation (SHG) of Nd : YAG laser (λ =532 nm). In all experiments, a repetition rate of 10 Hz, energy densities of 0.12.5 J/cm<SUP>2</SUP>, and irradiation times of 23 h were used. Scanning-Electron-Microscope (SEM) observations of the film surface revealed that there were micro-textured structures (0.51 μm in diameter) surrounded by small rugged and irregular structures (250400 nm in size). It was recognized from XRD spectra that a strong peak of (103) planes reflected from the micro-textured milky surfaces is dominant. A haze ratio of 46.6% was obtained at a wavelength of 550 nm for about 800-nm-thick GZO (4 wt%) films grown at substrate temperature of 300°C in oxygen with a flow rate of 3 sccm. The lowest resisitivity of 2.33 × 10<SUP>-4</SUP> Ω· cm and the lowest sheet resistance of 2.72 Ω/sq were obtained for these GZO (4 wt%) films.

収録刊行物

  • 真空  

    真空 42(3), 329-332, 1999-03 

    The Vacuum Society of Japan

参考文献:  10件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10002476542
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4715429
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ