パルスレーザー堆積法により作製した凹凸構造を有するZnO系透明導電膜(II) Textured ZnO-Based Transparent Conducting Films Prepared by Pulsed Laser Deposition (II)
About 800-nm-thick ZnO films doped with 4 wt% Ga<SUB>2</SUB>O<SUB>3</SUB> (GZO films) have been deposited on glass and quartz substrates by a pulsed laser deposition method using Second-Harmonic-Generation (SHG) of Nd : YAG laser (λ =532 nm). In all experiments, a repetition rate of 10 Hz, energy densities of 0.12.5 J/cm<SUP>2</SUP>, and irradiation times of 23 h were used. Scanning-Electron-Microscope (SEM) observations of the film surface revealed that there were micro-textured structures (0.51 μm in diameter) surrounded by small rugged and irregular structures (250400 nm in size). It was recognized from XRD spectra that a strong peak of (103) planes reflected from the micro-textured milky surfaces is dominant. A haze ratio of 46.6% was obtained at a wavelength of 550 nm for about 800-nm-thick GZO (4 wt%) films grown at substrate temperature of 300°C in oxygen with a flow rate of 3 sccm. The lowest resisitivity of 2.33 × 10<SUP>-4</SUP> Ω· cm and the lowest sheet resistance of 2.72 Ω/sq were obtained for these GZO (4 wt%) films.
真空 42(3), 329-332, 1999-03
The Vacuum Society of Japan