シリコン結晶中の点欠陥形成に対する不純物原子の応力効果 The Effect of Stress due to Impurity on Point Defect Generation in Silicon Crystal
Equilibrium concentration change of point defects in Si crystal due to the stress by doping impurities is estimated. The relationship between equilibrium concentration of point defects and secondary defect generation are discussed. It is considered that the changing point defect concentration only about 0.1% affects the secondary defect generation.
真空 42(3), 349-352, 1999-03
The Vacuum Society of Japan