Si基板上のTi_<1-x>Al_xN薄膜の結晶配向性 Crystallinity of Ti_<1-x>Al_xN Thin Films on Si Substrate
As a buffer layer for epitaxial growth of ferroelectric oxide materials such as Pb (Zr, Ti) O<SUB>3</SUB>, thin films of Ti<SUB>1-x</SUB>Al<SUB>x</SUB>N have been grown on Si (001) substrates by pulsed-laser deposition. The crystallinity of Ti<SUB>1-x</SUB>Al<SUB>x</SUB>N films on Si decreases with increasing Al content, and can be improved by using TiN seed layer on Si before the growth of Ti<SUB>1-x</SUB>Al<SUB>x</SUB>N.
真空 42(3), 372-375, 1999-03
The Vacuum Society of Japan