(100)GaAs基板上に分子線エピタキシャル成長したCdTe薄膜の結晶性改善 Improved Molecular Beam Epitaxial Growth of the (100) CdTe Films on GaAs Substrates

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This paper describes structural and optical properties of the (100) CdTe films grown on (100) GaAs substrates by molecular beam epitaxy. The (100) CdTe films directly grown on GaAs contained many defects due to the large lattice mismatch between CdTe and GaAs. Photoluminescence (PL) and x-ray diffraction measurements revealed that the poor crystallographic quality of the CdTe films can be improved by inserting a MnTe buffer layer on a sulfur-treated GaAs substrate. It is also demonstrated that the use of a MnTe/CdTe superlattice as the buffer layer is more effective to reduce the defect-related emissions in PL spectra.

収録刊行物

  • 真空  

    真空 42(3), 376-379, 1999-03 

    The Vacuum Society of Japan

参考文献:  5件

各種コード

  • NII論文ID(NAID)
    10002476627
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4716430
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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