(100)GaAs基板上に分子線エピタキシャル成長したCdTe薄膜の結晶性改善 Improved Molecular Beam Epitaxial Growth of the (100) CdTe Films on GaAs Substrates
This paper describes structural and optical properties of the (100) CdTe films grown on (100) GaAs substrates by molecular beam epitaxy. The (100) CdTe films directly grown on GaAs contained many defects due to the large lattice mismatch between CdTe and GaAs. Photoluminescence (PL) and x-ray diffraction measurements revealed that the poor crystallographic quality of the CdTe films can be improved by inserting a MnTe buffer layer on a sulfur-treated GaAs substrate. It is also demonstrated that the use of a MnTe/CdTe superlattice as the buffer layer is more effective to reduce the defect-related emissions in PL spectra.
真空 42(3), 376-379, 1999-03
The Vacuum Society of Japan