Improved Molecular Beam Epitaxial Growth of the (100) CdTe Films on GaAs Substrates.

• KOIKE Kazuto

  New Materials Research Center, Osaka Institute of Technology

• TANAKA Ken-ichi

  New Materials Research Center, Osaka Institute of Technology

• FUJII Katsuhiro

  New Materials Research Center, Osaka Institute of Technology

• YANO Mitsuaki

  New Materials Research Center, Osaka Institute of Technology

Bibliographic Information

Other Title

• （１００）ＧａＡｓ基板上に分子線エピタキシャル成長したＣｄＴｅ薄膜の結晶性改善
• 100 GaAs キバン ジョウ ニ ブンシセン エピタキシャル セイチョウ シタ CdTe ハクマク ノ ケッショウセイ カイゼン

Abstract

This paper describes structural and optical properties of the (100) CdTe films grown on (100) GaAs substrates by molecular beam epitaxy. The (100) CdTe films directly grown on GaAs contained many defects due to the large lattice mismatch between CdTe and GaAs. Photoluminescence (PL) and x-ray diffraction measurements revealed that the poor crystallographic quality of the CdTe films can be improved by inserting a MnTe buffer layer on a sulfur-treated GaAs substrate. It is also demonstrated that the use of a MnTe/CdTe superlattice as the buffer layer is more effective to reduce the defect-related emissions in PL spectra.

Journal

• Shinku

  Shinku 42 (3), 376-379, 1999

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390001204065389568
• NII Article ID: 10002476627
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.42.376
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 4716430
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4716430
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed