Cd, Te 分子線で照射されたInSb基板表面における反応生成物 Surface Reaction on an InSb Film Irradiated by Cd and Te_2 Molecular Beams

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In order to grow CdTe/InSb heterostructures by molecular beam epitaxy, the chemical reaction between InSb surface and molecular beams for CdTe growth was studied. The chemical reaction was analyzed by using reflection highenergy electron diffraction, Raman scattering, and Auger electron spectroscopy. It is revealed that In<SUB>2</SUB>Te<SUB>3</SUB> compound is easily formed on the InSb surface irradiated by Te excess beams, which deteriorates the CdTe growth on it. This chemical reaction was inevitable even at 200°C under the Te excess beam condition but can be suppressed by using Cd excess beams. Under a Cd excess beam condition, high quality CdTe/InSb heterostructures of which photoluminescence spectra were dominated by CdTe exciton peaks were obtained at a substrate temperature as high as 280°C.

収録刊行物

  • 真空  

    真空 42(3), 380-383, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476633
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4716447
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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