固体炭素源を用いた2元交互スパッタリングによるTiC薄膜の作製 [in Japanese] TiC Film Preparation by Alternate Deposition of Ti and C with Dual Magnetron Sputtering Method [in Japanese]
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Titanium Carbide films have been prepared by depositing alternately Ti and C thin layers from dual magnetron sputtering sources on aluminoborosilicate glass substrates. Composition, structure, hardness and other mechanical properties have been studied as a function of C/Ti flux ratio. The apparatus used in the experiment was a dual cathode sputtering machine. By rotating the substrate holder, Ti and C layers were alternately deposited on the substrate. Thickness of Ti and C layer deposited in one revolution were 0.15 nm and 0.07 nm, respectively. The C/Ti ratio of the films was controlled by changing the flux ratio of Ti and C. The XPS results showed that the C content in the films changed from 0 at% to 100 at% continuously. The XRD patterns showed that the film structure changed from α-Ti to fcc-TiC, and then, to amorphous carbon with increasing the C/Ti ratio of the films. The maximum dynamic hardness of about 16 GPa was obtained for the film deposited at a C/Ti flux ratio of 1. High adhesion strength and wear resistance were achieved for films deposited at C/Ti ratio of films over 1.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(3), 384-387, 1999-03
The Vacuum Society of Japan