固体炭素源を用いた2元交互スパッタリングによるTiC薄膜の作製 TiC Film Preparation by Alternate Deposition of Ti and C with Dual Magnetron Sputtering Method

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Titanium Carbide films have been prepared by depositing alternately Ti and C thin layers from dual magnetron sputtering sources on aluminoborosilicate glass substrates. Composition, structure, hardness and other mechanical properties have been studied as a function of C/Ti flux ratio. The apparatus used in the experiment was a dual cathode sputtering machine. By rotating the substrate holder, Ti and C layers were alternately deposited on the substrate. Thickness of Ti and C layer deposited in one revolution were 0.15 nm and 0.07 nm, respectively. The C/Ti ratio of the films was controlled by changing the flux ratio of Ti and C. The XPS results showed that the C content in the films changed from 0 at% to 100 at% continuously. The XRD patterns showed that the film structure changed from α-Ti to fcc-TiC, and then, to amorphous carbon with increasing the C/Ti ratio of the films. The maximum dynamic hardness of about 16 GPa was obtained for the film deposited at a C/Ti flux ratio of 1. High adhesion strength and wear resistance were achieved for films deposited at C/Ti ratio of films over 1.

収録刊行物

  • 真空  

    真空 42(3), 384-387, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476640
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4716457
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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