水冷式分子線成長法によるAlGaAs多層膜の形成 Growth of AlGaAs/GaAs Multi Layers by Molecular Beam Epitaxy with Water Cooling System
AlGaAs/GaAs quantum wells and Si-doped GaAs layers grown by molecular beam epitaxy (MBE) with water cooling system are characterized by photoluminescence and Hall effect measurements. The photoluminescence spectra from 3 nm and 8 nm thick GaAs quantum wells are in good agreement with theoretically calculated values at 4.2 K. Obtained carrier concentrations are 79 × 10<SUP>17</SUP>/cm<SUP>3</SUP> with the mobilities larger than 2000 cm<SUP>2</SUP>/V s at 300 K, which shows the background impurity concentration less than 1 × 10<SUP>17</SUP>/cm<SUP>3</SUP>. It is found that Al evaporation is remarkably effective for selective gettering of O<SUP>2</SUP> and H<SUB>2</SUB>O in the system.
真空 42(4), 525-529, 1999-04
The Vacuum Society of Japan