プラズマ発光分光分析によるGaN電子サイクロトロン共鳴プラズマ励起分子線エピキシャル成長の観察 Observation of Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxial Growth of GaN by Optical Emission Spectroscopy

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We observed excited species near a substrate during GaN growth by optical emission spectroscopy (OES). Both GaN growth rate and excited Ga emission intensity were studied by varying substrate bias conditions. Decrease in Ga emission intensity under high positive bias condition can be explained by suppression of Ga desorption. Thus, OES is considered to be a useful tool to understand GaN growth mechanism in ECR plasma-excited MBE.<BR>We also demonstrated GaN growth using helium-nitrogen mixed gas plasma. It was found that, compared with the GaN growth using nitrogen plasma without helium, the GaN growth rate was increased by using the mixed gas plasma.

収録刊行物

  • 真空  

    真空 42(4), 530-534, 1999-04 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476985
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05598516
  • NDL 記事登録ID
    4750737
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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