プラズマ発光分光分析によるGaN電子サイクロトロン共鳴プラズマ励起分子線エピキシャル成長の観察 Observation of Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxial Growth of GaN by Optical Emission Spectroscopy
We observed excited species near a substrate during GaN growth by optical emission spectroscopy (OES). Both GaN growth rate and excited Ga emission intensity were studied by varying substrate bias conditions. Decrease in Ga emission intensity under high positive bias condition can be explained by suppression of Ga desorption. Thus, OES is considered to be a useful tool to understand GaN growth mechanism in ECR plasma-excited MBE.<BR>We also demonstrated GaN growth using helium-nitrogen mixed gas plasma. It was found that, compared with the GaN growth using nitrogen plasma without helium, the GaN growth rate was increased by using the mixed gas plasma.
真空 42(4), 530-534, 1999-04
The Vacuum Society of Japan