GaP結晶(111)面におけるスパイラル・ピットの形成

• 菅原 茂夫

  秋田大学工学資源学部材料工学科

書誌事項

タイトル別名

• Formation of Spiral Pits on (111) Surfaces of GaP Crystals
• Gap ケッショウ 111 メン ニ オケル スパイラル ピット ノ ケイセイ

抄録

The (111) wafers obtained from a Te-doped GaP crystal were etched at 60-80°C over a time period of 1.2×10³ to 7.2×10³ s with a solution composed of H₂SO₄+H₂O₂+H₂O (5:1:1 in volume ratio) and the etch-figures were observed mainly by optical microscopy.<BR>At temperatures above 70°C, spiral etch-pits developed on the (\bar1\bar1\bar1)_P surface of the wafers in addition to the normal etch-pits. The spiral etch-pits increased in size with increasing etching temperature and etching time, while the size of normal etch pits remained constant. On the (111)_Ga surface rather small spiral etch-pits were also formed at 80°C, but their size remained unchanged with increasing etching time. From the experiments of double etching with a H₂SO₄+H₂O₂+H₂O solution and an RC etchant, it was concluded that the former etching produces normal pits at edge dislocations and spiral pits at screw dislocations, respectively, and that the latter etching forms dark pits at edge dislocations and S-pits at small lattice defects, respectively.

収録刊行物

• 日本金属学会誌

  日本金属学会誌 63 (4), 435-439, 1999

  公益社団法人 日本金属学会

キーワード

• gallium phosphide
• single crystal
• etching
• spiral
• etch pit
• dislocation
• lattice defect
• optical microscopy

詳細情報

• CRID: 1390282681467477888
• NII論文ID: 10002549473
• NII書誌ID: AN00187860
• DOI: 10.2320/jinstmet1952.63.4_435
• ISSN: 18806880
• ISSN: 24337501
• ISSN: 00214876
• NDL書誌ID: 4705437
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4705437
• Web Site: https://www.jstage.jst.go.jp/article/jinstmet1952/63/4/63_4_435/_pdf
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