Reversible Quenching of Red Photoluminescence of Porous Silicon with Adsorption of Alcohol OH-Groups I
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- SHIMURA Michiko
- Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University
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- MAKINO Naoko
- ANRITSU Corporation
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- YOSHIDA Kiyoshi
- Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University
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- HATTORI Tetsuo
- Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University
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- OKUMURA Tsugunori
- Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University
Bibliographic Information
- Other Title
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- アルコール分子OH基の吸着によるポーラスシリコン赤色発光の可逆的消光 I
- アルコール分子OH基の吸着によるポーラスシリコン赤色発光の可逆的消光(1)
- アルコール ブンシ OHキ ノ キュウチャク ニ ヨル ポーラス シリコン セキショク ハッコウ ノ カギャクテキ ショウコウ 1
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Abstract
<p>Red (ca. 1.82eV) photoluminescence (PL) of porous silicon was quenched reversibly in accordance with adsorption and desorption of alcoholic OH groups. The alcoholic OH groups adsorbed on SiHx of porous silicon with hydrogen bonding. From plots of log (PL100−PLT)/PL100 vs. 1/T, where PL100 and PLT are the PL intensities at 100 and TK, respectively, the activation energy of ca. 50eV was calculated for the non-radiative deactivation path of the excited electrons which are in an energy state possible to emit red PL. For the nonradiative deactivation path that were made with the adsorption of alcoholic OH groups, the activation energy was assumed to be negligible and independent on temperature.</p>
Journal
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- Electrochemistry
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Electrochemistry 67 (1), 63-67, 1999-01-05
The Electrochemical Society of Japan
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Details 詳細情報について
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- CRID
- 1390282752369898240
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- NII Article ID
- 10002566141
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- NII Book ID
- AN00151637
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- ISSN
- 21862451
- 13443542
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- NDL BIB ID
- 111521
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Allowed