Frontiers in Crystallography with Synchrotron Radiation. X-ray Studies near Absorption Edges of Elements. Atom-Selective Experiments. Multiple Wavelength Dispersion Analysis of Semiconductor Interface Structure.

• AKIMOTO Koichi

  Department of Quantum Engineering, Nagoya University

Bibliographic Information

Other Title

• 放射光Ｘ線結晶学で今何ができるか？　吸収端近傍のＸ線を使って　特定の元素に着目して　多波長異常分散法で半導体界面構造をみる
• タ ハチョウ イジョウ ブンサンホウ デ ハンドウタイ カイメン コウゾウ オ

Abstract

The multiple wavelength anomalous dispersion (MAD), a powerful direct method, has been modified and applied for the first time to the interface structural analysis. This allows us to separate heavy and light atoms, and so deduce the structure.

Journal

• Nihon Kessho Gakkaishi

  Nihon Kessho Gakkaishi 39 (1), 45-48, 1997

  The Crystallographic Society of Japan

Details

• CRID: 1390001204087739008
• NII Article ID: 10002589129
• NII Book ID: AN00188364
• DOI: 10.5940/jcrsj.39.45
• ISSN: 18845576
• ISSN: 03694585
• NDL BIB ID: 4159565
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4159565
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed