3. 微少量・高精度・極限に迫る 全反射を利用して超薄膜を調べる [in Japanese] Characterization of Thin Films with X-ray Total Reflection Technology [in Japanese]
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Characterization of thin films with x-ray total reflection is introduced. Titanium silicite thin films are studied by grazing incidence x-ray diffraction. The epitaxial C49-TiSi<SUB>2</SUB> grains are formed on heavily BF<SUB>2</SUB> ion implanted Si (001) substrate after low temperature annealing, and they suppress the phase transition from C49 to C54 during high temperature annealing. SiO<SUB>2</SUB> thin films are investigated by x-ray reflectivity analysis. Thermal oxides have always the high density interface layer of -1 nm in thickness. Extremely thin native oxides on Si is also characterized in a function of chemical cleaning solutions.
X-RAYS 39(1), 89-93, 1997-02-28
The Crystallographic Society of Japan