3. 微少量・高精度・極限に迫る トポグラフィでSi結晶の欠陥を観る [in Japanese] Topographic Observations of Lattice Defects in Silicon Crystals [in Japanese]
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Recent studies on lattice defects in silicon single crystals using synchrotron radiation topography are reviewed. Two types of methods are described, the plane wave topography using highly collimated x-rays with an angular divergence of less than 0.01 arcsec and the Lang topography using high energy x-rays of 60keV. Experiments of imaging of grown-in microdefects in FZ- and CZ-silicon crystals and growth striations in MCZ-Si crystals show that these methods are highly sensitive to minute lattice strain of the order of 10<SUP>-7</SUP> which could not be measured by the conventional x-ray topograpy.
X-RAYS 39(1), 110-114, 1997-02-28
The Crystallographic Society of Japan