3. 微少量・高精度・極限に迫る トポグラフィでSi結晶の欠陥を観る Topographic Observations of Lattice Defects in Silicon Crystals
Recent studies on lattice defects in silicon single crystals using synchrotron radiation topography are reviewed. Two types of methods are described, the plane wave topography using highly collimated x-rays with an angular divergence of less than 0.01 arcsec and the Lang topography using high energy x-rays of 60keV. Experiments of imaging of grown-in microdefects in FZ- and CZ-silicon crystals and growth striations in MCZ-Si crystals show that these methods are highly sensitive to minute lattice strain of the order of 10<SUP>-7</SUP> which could not be measured by the conventional x-ray topograpy.
日本結晶学会誌 39(1), 110-114, 1997-02-28
The Crystallographic Society of Japan