窒化ガリウム系結晶の開発 -その歴史と展望- [in Japanese] Development of Gallium Nitride Based Crystals-Present Status and Future Prospects [in Japanese]
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Recent development of gallium nitride (GaN) based crystals was reviewed. Use of low temperature deposited buffer layer is essential for the growth of device-quality GaN on highly-mismatched substrate.
X-RAYS 39(2), 202-204, 1997-04-28
The Crystallographic Society of Japan