Thermal Study of a Silylmethylated Fullerene Leading to Preparation of Its Vacuum Deposited Thin Films

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著者

    • NAGASHIMA Hideo
    • Department of Materials Science, Toyohashi University of Technology
    • KATO Yoshiyuki
    • Department of Materials Science, Toyohashi University of Technology
    • SATOH Hirohisa
    • Department of Materials Science, Toyohashi University of Technology
    • ITOH Kenji
    • Department of Materials Science, Toyohashi University of Technology
    • OI Kazuhiro
    • Department of Electrical Engineering, Mie University

抄録

Thermal study of a C<SUB>60</SUB> derivative containing a siloxane structure revealed that it was unstable above 350 °C. A major decomposition pathway was formation of C<SUB>60</SUB> and (Me<SUB>3</SUB>Si)<SUB>2</SUB>O presumably <I>via</I> homolysis of bonds between the α-carbon of the silyl group and the cage carbon. By careful control of the crucible temperature below 350 °C, amorphous vapor-deposited thin films on NaCl or mica were successfully prepared.

収録刊行物

  • Chemistry letters  

    Chemistry letters 1996(7), 519-520, 1996-07 

    The Chemical Society of Japan

参考文献:  19件

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各種コード

  • NII論文ID(NAID)
    10002604330
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    03667022
  • データ提供元
    CJP書誌  J-STAGE 
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