Thermal Study of a Silylmethylated Fullerene Leading to Preparation of Its Vacuum Deposited Thin Films
Thermal study of a C<SUB>60</SUB> derivative containing a siloxane structure revealed that it was unstable above 350 °C. A major decomposition pathway was formation of C<SUB>60</SUB> and (Me<SUB>3</SUB>Si)<SUB>2</SUB>O presumably <I>via</I> homolysis of bonds between the α-carbon of the silyl group and the cage carbon. By careful control of the crucible temperature below 350 °C, amorphous vapor-deposited thin films on NaCl or mica were successfully prepared.
- Chemistry letters
Chemistry letters 1996(7), 519-520, 1996-07
The Chemical Society of Japan