Thermal Study of a Silylmethylated Fullerene Leading to Preparation of Its Vacuum Deposited Thin Films

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  • Hideo Nagashima
    Department of Materials Science, Toyohashi University of Technology
  • Yoshiyuki Kato
    Department of Materials Science, Toyohashi University of Technology
  • Hirohisa Satoh
    Department of Materials Science, Toyohashi University of Technology
  • Naoki Kamegashima
    Department of Materials Science, Toyohashi University of Technology
  • Kenji Itoh
    Department of Materials Science, Toyohashi University of Technology
  • Kazuhiro Oi
    Department of Electrical Engineering, Mie University
  • Yahachi Saito
    Department of Electrical Engineering, Mie University

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<jats:title>Abstract</jats:title> <jats:p>Thermal study of a C60 derivative containing a siloxane structure revealed that it was unstable above 350 °C. A major decomposition pathway was formation of C60 and (Me3Si)2O presumably via homolysis of bonds between the α-carbon of the silyl group and the cage carbon. By careful control of the crucible temperature below 350 °C, amorphous vapor-deposited thin films on NaCl or mica were successfully prepared.</jats:p>

収録刊行物

  • Chemistry Letters

    Chemistry Letters 25 (7), 519-520, 1996-07-01

    Oxford University Press (OUP)

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