Coverage Dependent Structure of Electrochemically Deposited Cu on p-GaAs(100) in H_2SO_4 Solution Determined by In Situ Surface X-Ray Absorption Fine Structure Spectra

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著者

    • KONDO Toshihiro
    • Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido University
    • TAMURA Kazuhisa
    • Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido University
    • KOINUMA Michio
    • Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido University
    • UOSAKI Kohei
    • Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido University

抄録

<I>In situ</I> surface X-ray absorption fine structure technique was applied to study the structures of electrochemically deposited Cu on a <I>p</I>-GaAs(100) electrode with various coverage. Extended X-ray absorption fine structure (EXAFS) spectra of Cu were obtained with high S/N ratio even from submonolayer deposit. EXAFS data showed that the Cu clusters were formed on the <I>p</I>-GaAs(100) electrode as the deposition exceeded more than one monolayer. The structure of the submonolayer deposit was different from that of the bulk deposit. The neighboring atoms in the latter are only Cu of the fcc structure but those in the former are O and Cu of shorter bond length.

収録刊行物

  • Chemistry letters  

    Chemistry letters 1997(8), 761-762, 1997-08 

    The Chemical Society of Japan

参考文献:  22件

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各種コード

  • NII論文ID(NAID)
    10002613840
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    03667022
  • データ提供元
    CJP書誌  J-STAGE 
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