Coverage Dependent Structure of Electrochemically Deposited Cu on <i>p</i>-GaAs(100) in H2SO4 Solution Determined by <i>In Situ</i> Surface X-Ray Absorption Fine Structure Spectra

• Toshihiro Kondo

  Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido UniversitySapporo

• Kazuhisa Tamura

  Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido UniversitySapporo

• Michio Koinuma

  Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido UniversitySapporo

• Hiroyuki Oyanagi

  Electrotechnical LaboratoryTsukuba, Ibaraki

• Kohei Uosaki

  Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido UniversitySapporo

Abstract

In situ surface X-ray absorption fine structure technique was applied to study the structures of electrochemically deposited Cu on a p-GaAs(100) electrode with various coverage. Extended X-ray absorption fine structure (EXAFS) spectra of Cu were obtained with high S/N ratio even from submonolayer deposit. EXAFS data showed that the Cu clusters were formed on the p-GaAs(100) electrode as the deposition exceeded more than one monolayer. The structure of the submonolayer deposit was different from that of the bulk deposit. The neighboring atoms in the latter are only Cu of the fcc structure but those in the former are O and Cu of shorter bond length.

Journal

• Chemistry Letters

  Chemistry Letters 26 (8), 761-762, 1997-08-01

  Oxford University Press (OUP)

Keywords

• General Chemistry

Details

• CRID: 1360565169062816640
• NII Article ID: 10002613840
• NII Book ID: AA00603318
• DOI: 10.1246/cl.1997.761
• ISSN: 13480715
• ISSN: 03667022
• Web Site: https://academic.oup.com/chemlett/article-pdf/26/8/761/56075227/cl.1997.761.pdf
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