Facile Fabrication Procedure for C_<60>-Doped Silicon Oxide Thin Films

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著者

    • HASEGAWA Isao
    • Department of Chemistry, Faculty of Engineering, Gifu University
    • SHIBUSA Koji
    • Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University
    • KOBAYASHI Sastoshi
    • Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University
    • NONOMURA Shuichi
    • Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University
    • NITTA Shoji
    • Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University

抄録

C<SUB>60</SUB>-doped silicon oxide thin films can be prepared easily by sol-gel processing using a mixture of phenyltriethoxysilane and tetraethoxysilane as the silicon oxide sources. Preparation of C<SUB>60</SUB>-dissolved single-phase starting solutions is practicable by employing phenyltriethoxysilane which acts as a solubilization agent of C<SUB>60</SUB> as well as the silicon oxide source.

収録刊行物

  • Chemistry letters

    Chemistry letters 1997(10), 995-996, 1997-10

    The Chemical Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002615588
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    03667022
  • データ提供元
    CJP書誌  J-STAGE 
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