Facile Fabrication Procedure for C_<60>-Doped Silicon Oxide Thin Films
C<SUB>60</SUB>-doped silicon oxide thin films can be prepared easily by sol-gel processing using a mixture of phenyltriethoxysilane and tetraethoxysilane as the silicon oxide sources. Preparation of C<SUB>60</SUB>-dissolved single-phase starting solutions is practicable by employing phenyltriethoxysilane which acts as a solubilization agent of C<SUB>60</SUB> as well as the silicon oxide source.
- Chemistry letters
Chemistry letters 1997(10), 995-996, 1997-10
The Chemical Society of Japan