Facile Fabrication Procedure for C<SUB>60</SUB>-Doped Silicon Oxide Thin Films

• Hasegawa Isao

  Department of Chemistry, Faculty of Engineering, Gifu University

• Shibusa Koji

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University

• Kobayashi Satoshi

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University

• Nonomura Shuichi

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University

• Nitta Shoji

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University

Bibliographic Information

Other Title

• Facile Fabrication Procedure for C60-Doped Silicon Oxide Thin Films

Abstract

C₆₀-doped silicon oxide thin films can be prepared easily by sol-gel processing using a mixture of phenyltriethoxysilane and tetraethoxysilane as the silicon oxide sources. Preparation of C₆₀-dissolved single-phase starting solutions is practicable by employing phenyltriethoxysilane which acts as a solubilization agent of C₆₀ as well as the silicon oxide source.

Journal

• Chemistry Letters

  Chemistry Letters 26 (10), 995-996, 1997

  The Chemical Society of Japan

Keywords

• General Chemistry

Details

• CRID: 1390282679552098688
• NII Article ID: 10002615588
• NII Book ID: AA00603318
• DOI: 10.1246/cl.1997.995
• COI: 1:CAS:528:DyaK2sXms1ehu70%3D
• ISSN: 13480715
• ISSN: 03667022
• Web Site: https://academic.oup.com/chemlett/article-pdf/26/10/995/56073911/cl.1997.995.pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed