Modulation of Flat-band Potential and Increase in photovoltage for n-Si Electrodes by Formation of Halogen Atom Terminated Surface Bonds
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The flat-band potential (U<SUB>FB</SUB>) of n-Si electrodes in concentrated hydrogen halide (HX) solutions, as determined from Mott-Schottky plots and the onset potential of photocurrent, shifts largely toward the negative with the decreasing electronegativity of halogen atoms. XPS studies have shown the presence of halogen atoms on the Si electrodes which were beforehand immersed in the HX solutions. The shift in U<SUB>FB</SUB> can be explained as due to changes in surface potential by formation of Si-halogen surface termination bonds.
- Chemistry Letters
Chemistry Letters 1997(10), 1041-1042, 1997-10
The Chemical Society of Japan