Electronic Structures of Ga and In under High-Pressure Conditions
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Electronic properties of Ga and In under high-pressure conditions are investigated by using the first-principles molecular dynamics (FPMD) method with a stress calculation. As a result of calculation, critical pressures of overlapping shallow core d states and valence s states are 70 GPa for Ga and 120 GPa for In, respectively.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 196-198, 1998
The Japan Society of High Pressure Science and Technology