High Pressure Structural Phase Transition in AgGaTe_2
Access this Article
Search this Article
The high pressure X-ray diffraction pattern of AgGaTe<SUB>2</SUB> chalcopyrite semiconductor has been measured up to 18GPa. It is found that the first phase transition occurred at 3. 05±0. 05GPa and the chalcopyrite phase persists up to 5. 4GPa. The Rietveld analysis for the X-ray pattern recorded at 5. 4GPa shows the coexistence of the disordered tetragonal structure (P4) and the disordered orthorhombic structure (Cmcm).
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 327-328, 1998
The Japan Society of High Pressure Science and Technology