Amorphization from the Quenched High-Pressure Phase in III-V and II-VI Compounds
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The temperature dependences of phase transitions in GaSb, AlSb, GaAs, GaP, InAs, InP, ZnSe, and CdTe are studied by X-ray diffraction measurements under pressure up to 30 GPa at temperatures of 90-300 K. The phase transitions depend on paths in a pressure-temperature phase diagram. The structure of the recovered phase after decompression depends on the ionicity in bonding: amorphous for small ionicity, the stable zincblende structure for large ionicity, and microcrystalline for moderate ionicity. These results are discussed by using a configuration-coordinate model.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 353-355, 1998
The Japan Society of High Pressure Science and Technology