Amorphization from the Quenched High-Pressure Phase in III-V and II-VI Compounds

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The temperature dependences of phase transitions in GaSb, AlSb, GaAs, GaP, InAs, InP, ZnSe, and CdTe are studied by X-ray diffraction measurements under pressure up to 30 GPa at temperatures of 90-300 K. The phase transitions depend on paths in a pressure-temperature phase diagram. The structure of the recovered phase after decompression depends on the ionicity in bonding: amorphous for small ionicity, the stable zincblende structure for large ionicity, and microcrystalline for moderate ionicity. These results are discussed by using a configuration-coordinate model.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 353-355, 1998

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002690121
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4493927
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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