On the Non-existence of Diatomic β-Tin as a High-pressure Structure and Structural Systematics of the 2-6,3-5 and Group 4 Semiconductors
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- Nelmes R. J.
- Department of Physics and Astronomy, University of Edinburgh
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- McMahon M. I.
- Department of Physics, University of Liverpool
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- Belmonte S. A.
- Department of Physics and Astronomy, University of Edinburgh
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- Allan D. R.
- Department of Physics and Astronomy, University of Edinburgh
書誌事項
- タイトル別名
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- On the Non-existence of Diatomic .BETA.-Tin as a High-pressure Structure and Structural Systematics of the II-VI,III-V and Group IV Semiconductors.
- On the Non-existence of Diatomic ベーターTi
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抄録
Many high-pressure phases of the III-V and II-VI semiconductors have been believed to have the diatomic equivalent of the tetragonal β-tin structure. Recent work has shown this to be incorrect in several cases. It is now shown that the same is strue of all the remaining possibilities - AlSb, HgSe, InP and GaP. The phases concerned all have orthorhombic structures of the Cmcm type. The apparent non-existence of the β-tin structure has important implications for the structural systematics.
収録刊行物
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- 高圧力の科学と技術
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高圧力の科学と技術 7 379-381, 1998
日本高圧力学会
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詳細情報 詳細情報について
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- CRID
- 1390282679359038848
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- NII論文ID
- 10002690206
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- NII書誌ID
- AN10452913
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- ISSN
- 13481940
- 0917639X
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- NDL書誌ID
- 4493934
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可