High Pressure Structures of Organic Low Dimensional Conductor DCNQI Compounds

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抄録

Using X-ray and DAC, room-temperature crystal structures under physical pressure (PP) were solved for DCNQI-Cu compounds which exhibit particular metal-insulator (M-I) transition owing to their electronic low dimensionality (CDW) and strong correlation (Mott). This M-I transition is known to be triggered with moderate (=small) PP or chemical substitution (chemical pressure:CP). Observed high pressure structures were compared with theoretical structure determinations. From the structural viewpoint, relation between PP and CP effects on the M-I transition was discussed.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 404-406, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002690312
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4493940
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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