Quantum Hall Effect and Interlayer Resistance for the Organic Conductor(TMTSF)_2AsF_6

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Resistance measurements for the one dimensional organic conductor (TMTSF) <SUB>2</SUB>AsF<SUB>6</SUB> have been perfonned to investigate the chiral surface state, which is realized on the side of the single crystal in the field induced spindensity-wave (SDW) phases (quantum Hall phases). The interlayer resistance in the integer quantum Hall phase is found to show a steep increase below the SDW transition, have a maximum and then become constant. The steep increase of the resistance results from the carrier decrease due to the nesting of the one dimensional Fermi surfaces. The temperature independent resistance at low temperatures suggests diffusive motion of the electron by the formation of the chiral surface state. The sharp peak of the interlayer resistance is found between the adjacent quantum Hall phases at low temperatures.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 493-495, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002690727
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4493959
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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