Structural and Transport Properties of CuIr_2(S, Se)_4 under High Pressure

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The structural and transport properties of CuIr<SUB>2</SUB> (S<SUB>1-x</SUB>Se<SUB>x</SUB>) <SUB>4</SUB> spinel compounds under high pressure have been studied up to 10 GPa. Resistivities of all samples were found to become insulating with increasing pressure even for the samples behaving metallic at ambient condition. When pressure was applied to the metallic samples with x=0. 9 and 1. 0, an anomalous peak appeared below 100K in the temperature dependence of the resistivity at lower pressure, but the semiconducting behaviour governed the whole temperature region at higher pressure. No structural change was observed at the temperature above and below the anomalous peak. This behaviour was discussed by the model based on some ordering of the localized charges induced by applied pressure.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 496-498, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002690735
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4493960
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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