Structural and Transport Properties of CuIr2(S,Se)4 under High Pressure.

• Tang J.

  National Research Institute for Metals

• Furubayashi T.

  National Research Institute for Metals

• Kosaka T.

  Department of Science, University of Tsukuba

• Nagata S.

  Department of Materials Science and Engineering, Muroran Institute of Technology

• Kato Y.

  Department of Materials Science and Engineering, Muroran Institute of Technology

• Asano H.

  Institute of Materials Science, University of Tsukuba

• Matsumoto T.

  National Research Institute for Metals

書誌事項

タイトル別名

• Structural and Transport Properties of

抄録

The structural and transport properties of CuIr₂ (S_1-xSe_x) ₄ spinel compounds under high pressure have been studied up to 10 GPa. Resistivities of all samples were found to become insulating with increasing pressure even for the samples behaving metallic at ambient condition. When pressure was applied to the metallic samples with x=0. 9 and 1. 0, an anomalous peak appeared below 100K in the temperature dependence of the resistivity at lower pressure, but the semiconducting behaviour governed the whole temperature region at higher pressure. No structural change was observed at the temperature above and below the anomalous peak. This behaviour was discussed by the model based on some ordering of the localized charges induced by applied pressure.

収録刊行物

• 高圧力の科学と技術

  高圧力の科学と技術 7 496-498, 1998

  日本高圧力学会

キーワード

• transport property
• CuIr<SUB>2</SUB> (S, Se) <SUB>4</SUB>
• metal-insulator transition
• charge order

詳細情報

• CRID: 1390001204381572608
• NII論文ID: 10002690735
• NII書誌ID: AN10452913
• DOI: 10.4131/jshpreview.7.496
• ISSN: 13481940
• ISSN: 0917639X
• NDL書誌ID: 4493960
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4493960
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可