Pressure Dependence of Electrical Properties near Quantum Critical Point in LaTiO_<3+δ/2>
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We have investigated transport properties in LaTiO<SUB>3+δ/2</SUB>with δ∼0. 06 and δ∼0. 08, which are in the vicinity of magnetic instability, under high pressures up to 2 GPa. At ambient pressure, the sample with δ∼0. 06 shows a resistivity upturn around the Néel temperature while the resistivity for δ∼0. 08 continues to decrease down to the lowest temperature (2 K). Both samples exhibit anomalously large variation in residual resistivity in response to pressure which may be interpreted in terms of increase in Fermi surface area or effective carrier number. Temperature dependence of resistivity in the sample of δ∼0. 08 changes from T<SUP>1. 6</SUP> to T<SUP>2. 0</SUP> under pressure of 2 GPa, which signals pressure induced crossover from an anomalous metal to a conventional Fermi liquid.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 502-504, 1998
The Japan Society of High Pressure Science and Technology