Pressure Dependence of Electrical Properties near Quantum Critical Point in LaTiO3+δ/2

• Taguchi Y.

  Department of Applied Physics, University of Tokyo

• Tokura Y.

  Department of Applied Physics, University of Tokyo

• Ohashi M.

  Institute for Solid State Physics, University of Tokyo

• Murayama C.

  Institute for Solid State Physics, University of Tokyo

• Môri N.

  Institute for Solid State Physics, University of Tokyo

書誌事項

タイトル別名

• Pressure Dependence of Electrical Properties near Quantum Critical Point in LaTiO3+.DELTA./2.
• Pressure Dependence of Electrical Prope

抄録

We have investigated transport properties in LaTiO_3+δ/2with δ∼0. 06 and δ∼0. 08, which are in the vicinity of magnetic instability, under high pressures up to 2 GPa. At ambient pressure, the sample with δ∼0. 06 shows a resistivity upturn around the Néel temperature while the resistivity for δ∼0. 08 continues to decrease down to the lowest temperature (2 K). Both samples exhibit anomalously large variation in residual resistivity in response to pressure which may be interpreted in terms of increase in Fermi surface area or effective carrier number. Temperature dependence of resistivity in the sample of δ∼0. 08 changes from T^{1. 6} to T^{2. 0} under pressure of 2 GPa, which signals pressure induced crossover from an anomalous metal to a conventional Fermi liquid.

収録刊行物

• 高圧力の科学と技術

  高圧力の科学と技術 7 502-504, 1998

  日本高圧力学会

キーワード

• magnetic instability
• high pressure
• Fermi surface area
• anomalous metal
• Fermi liquid

詳細情報

• CRID: 1390282679359262080
• NII論文ID: 10002690762
• NII書誌ID: AN10452913
• DOI: 10.4131/jshpreview.7.502
• ISSN: 13481940
• ISSN: 0917639X
• NDL書誌ID: 4493962
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4493962
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可