The Pressure Approach to the Origin of the Anomalous State in the Quasi-Two-Dimensional Organic Conductor α-(BEDT-TTF)_2KHg(SCN)_4

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Quasi-two-dimensional conductor α- (BEDT-TTF) <SUB>2</SUB>KHg (SCN) <SUB>4</SUB> has the so-called anomalous electronic state at low temperature, while the isostructural salt α- (BEDT-TTF) <SUB>2</SUB>NH<SUB>4</SUB>Hg (SCN) <SUB>4</SUB> shows a normal behavior. In order to investigate the anomalous state by pressure approach, we measured the angular dependence of magnetoresistance under pressure to probe the Fermi surface topology. In α- (BEDT-TTF) <SUB>2</SUB>KHg (SCN) <SUB>4</SUB>, pressure suppresses the anomalous state and resurrects the normal one. Above the critical pressure, we found a quasi-one-dimensional Fermi surface responsible for the anomalous state. A detailed analysis of the pressure dependence of magnetoresistance shows that pressurization enhances the warp of the planar Fermi surface. In α- (BEDT-TTF) <SUB>2</SUB>NH<SUB>4</SUB>Hg (SCN) <SUB>4</SUB>, the higher harmonic components of the warping was found to be comparatively large.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 520-522, 1998

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002690855
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4493968
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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